MMBTA42_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBTA92)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking (See Page 2): K3M
• Ordering & Date Code Information: See Page 2
• Weight: 0.008 grams (approximate)
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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A
C
BC
B TOP VIEW E
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
300
300
6.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
Min
Max Unit
V_(BR)CBO
300
⎯
V
V_(BR)CEO
300
⎯
V
V_(BR)EBO
6.0
⎯
V
I_CBO
⎯
100
nA
I_EBO
⎯
100
nA
25
h_FE
40
40
V_CE(SAT)
⎯
V_BE(SAT)
⎯
C_cb
⎯
f_T
50
⎯
⎯
0.5
V
0.9
V
3.0
pF
⎯
MHz
Test Condition
I_C = 100μA, I_E = 0
I_C = 1.0mA, I_B = 0
I_E = 100μA, I_C = 0
V_CB = 200V, I_E = 0
V_CE = 6.0V, I_C = 0
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
I_C = 30mA, V_CE = 10V
I_C = 20mA, I_B = 2.0mA
I_C = 20mA, I_B = 2.0mA
V_CB = 20V, f = 1.0MHz, I_E = 0
V_CE = 20V, I_C = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R_θJA), power
dissipation rating (P_d) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30062 Rev. 11 - 2
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