MMBTA42_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODEL: MMBTA42
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMBTA92)
• Ideal for Low Power Amplification and Switching
• Lead Free/RoHS Compliant (Note 4)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
A
C
BC
B TOP VIEW E
E
D
G
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method
208
• Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
• Marking (See Page 2): K3M
• Ordering & Date Code Information: See Page 2
• Weight: 0.008 grams (approximate)
K
M
J
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
300
300
6.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol
Min
Max Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
V_(BR)CBO
300
⎯
V
V_(BR)CEO
300
⎯
V
V_(BR)EBO
6.0
⎯
V
I_CBO
⎯
100
nA
I_EBO
⎯
100
nA
I_C = 100μA, I_E = 0
I_C = 1.0mA, I_BB = 0
I_E = 100μA, I_C = 0
V_CB = 200V, I_E = 0
V_CE = 6.0V, I_C = 0
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
25
h_FE
40
⎯
⎯
40
V_CE(SAT)
⎯
0.5
V
V_BE(SAT)
⎯
0.9
V
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
I_C = 30mA, V_CE = 10V
I_C = 20mA, I_BB = 2.0mA
I_C = 20mA, I_BB = 2.0mA
Output Capacitance
C_cb
⎯
3.0
pF
V_CB = 20V, f = 1.0MHz, I_E = 0
Current Gain-Bandwidth Product
f_T
50
⎯
MHz
V_CE = 20V, I_C = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R_θJA), power
dissipation rating (P_d) and power derating curve (figure 1).
4. No purposefully added lead.
DS30062 Rev. 10 - 2
1 of 3
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