MMBTA42 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(MMBTA92)
· Ideal for Medium Power Amplification and
Switching
A
C
BC
Mechanical Data
B TOP VIEW E
· Case: SOT-23, Molded Plastic
E
D
G
· Case Material - UL Flammability Rating 94V-0
H
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
K
M
J
L
· Terminal Connections: See Diagram
· Marking (See Page 2): K3M
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
V_CEO
VEBO
IC
Pd
R_qJA
T_j, T_STG
MMBTA42
300
300
6.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
K/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
V(BR)CBO
300
¾
V(BR)CEO
300
¾
V(BR)EBO
6.0
¾
ICBO
¾
100
IEBO
¾
100
V
IC = 100mA, IE = 0
V
IC = 1.0mA, IB = 0
V
I_E = 100mA, I_C = 0
nA
VCB = 200V, IE = 0
nA
VCE = 6.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
25
IC = 1.0mA, VCE = 10V
hFE
40
¾
¾
I_C = 10mA, V_CE = 10V
40
IC = 30mA, VCE = 10V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V_CE(SAT)
¾
0.5
VBE(SAT)
¾
0.9
V
I_C = 20mA, I_B = 2.0mA
V
I_C = 20mA, I_B = 2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Ccb
¾
3.0
pF
VCB = 20V, f = 1.0MHz, IE = 0
fT
50
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R_qJA), power dissipation rating (P_d) and power derating curve (figure 1).
DS30062 Rev. 4 - 2
1 of 2
MMBTA42