MMBTA28_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
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A
C
BC
B TOP VIEW E
E
D
G
H
K
M
J
L
C
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
R_θJA
T_J, T_STG
Value
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Symbol Min
Max
V_(BR)CBO
80
⎯
V_(BR)EBO
12
⎯
V_(BR)CEO
80
⎯
I_CBO
⎯
100
I_CES
⎯
500
I_EBO
⎯
100
h_FE
10,000
10,000
⎯
V_CE(SAT)
⎯
1.5
V_BE(SAT)
⎯
2.0
C_obo
C_ibo
f_T
8.0 Typical
15 Typical
125
⎯
Unit
Test Condition
V I_C = 100μA I_E = 0
V I_E = 100μA I_C = 0
V I_C = 100μA I_B = 0
nA V_CB = 60V, I_E = 0
nA V_CE = 10V
nA V_EB = 10V, I_C = 0
⎯
I_C = 10mA, V_CE = 5.0V
I_C = 100mA, V_CE = 5.0V
V I_C = 100mA, I_B = 100μA
V I_C = 100mA, V_CE = 5.0V
pF
pF
MHz
V_CB = 10V, f = 1.0MHz, I_E = 0
V_EB = 0.5V, f = 1.0MHz, I_C = 0
V_CE = 5.0V, I_C = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30367 Rev. 9 - 2
1 of 3
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MMBTA28
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