MMBTA28_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

SPICE MODEL: MMBTA28
Pb
MMBTA28
Lead-free
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead Free/RoHS Compliant (Note 3)
A
C
BC
Mechanical Data
B TOP VIEW E
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
E
D
G
H
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
K
M
J
L
D
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
C
leadframe).
• Marking (See Page 3): K6R
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
IC
P_d
RθJA
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Value
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol
Min
Max
V_(BR)CBO
80

V(BR)EBO
12

V_(BR)CEO
80

ICBO

100
I_CES

500
I_EBO

100
hFE
10,000
10,000

VCE(SAT)

1.5
V_BE(SAT)

2.0
Cobo
C_ibo
8.0 Typical
15 Typical
Unit
V
V
V
nA
nA
nA

V
V
pF
pF
Current Gain-Bandwidth Product
f_T
125

MHz
Notes: 1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30367 Rev. 8 - 2
1 of 3
www.diodes.com
Test Condition
I_C = 100µA I_E = 0
I_E = 100µA I_C = 0
IC = 100µA IB = 0
V_CB = 60V, I_E = 0
V_CE = 10V
VEB = 10V, IC = 0
I_C = 10mA, V_CE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, IB = 100µA
IC = 100mA, VCE = 5.0V
V_CB = 10V, f = 1.0MHz, I_E = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V_CE = 5.0V, I_C = 10mA,
f = 100MHz
MMBTA28
© Diodes Incorporated