MMBTA28 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Ideal for Medium Power Amplification and
A
Switching
C
· High Current Gain
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
B TOP VIEW E
E
D
G
H
BC
· Moisture sensitivity: Level 1 per J-STD-020A
K
M
· Terminals: Solderable per MIL-STD-202,
Method 208
J
L
D
· Terminal Connections: See Diagram
· Marking (See Page 2): K6R
C
· Weight: 0.008 grams (approx.)
· Ordering & Date Code Information: See Page 2
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Symbol
V_CBO
VCEO
V_EBO
I_C
P_d
R_qJA
Tj, TSTG
MMBTA28
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Symbol
Min
Max
V_(BR)CBO
80
¾
V(BR)EBO
12
¾
V(BR)CEO
80
¾
ICBO
¾
100
IEBO
¾
100
hFE
10,000
10,000
¾
V_CE(SAT)
¾
1.5
VBE(SAT)
¾
2.0
Cobo
C_ibo
fT
8.0 Typical
15 Typical
125
¾
Unit
Test Condition
V
I_C = 100mA I_E = 0
V
IE = 100mA IC = 0
V
IC = 100mA IB = 0
nA
VCB = 60V, IE = 0
nA
VEB = 10V, IC = 0
¾
I_C = 10mA, V_CE = 5.0V
IC = 100mA, VCE = 5.0V
V
IC = 100mA, IB = 100mA
V
IC = 100mA, VCE = 5.0V
pF
pF
MHz
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 5.0V, IC = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 nch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30367 Rev. 2 - 2
1 of 3
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MMBTA28