MMBTA13 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

MMBTA13 / MMBTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Types Available
(MMBTA63 / MMBTA64)
A
· Ideal for Medium Power Amplification and
Switching
· High Current Gain
C
BC
Mechanical Data
B TOP VIEW E
E
D
G
· Case: SOT-23, Molded Plastic
H
· Case material - UL Flammability Rating
Classification 94V-0
K
M
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202, Method
208
J
L
C
· Terminal Connections: See Diagram
· MMBTA13 Marking (See Page 2): K2D, K3D
· MMBTA14 Marking (See Page 2): K3D
B
E
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
R_qJA
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
MMBTA13
MMBTA14
30
30
10
300
300
417
-55 to +150
Unit
V
V
V
mA
mW
°CW
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
V(BR)CEO
30
¾
ICBO
¾
100
I_EBO
¾
100
MMBTA13
5,000
MMBTA14
MMBTA13
hFE
10,000
10,000
¾
MMBTA14
20,000
VCE(SAT)
¾
1.5
V_BE(SAT)
¾
2.0
C_obo
Cibo
f_T
8.0 Typical
15 Typical
125
¾
V
I_C = 100mA V_BE = 0V
nA
VCB = 30V, IE = 0
nA
VEB = 10V, IC = 0
IC = 10mA, VCE = 5.0V
¾
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
V
IC = 100mA, IB = 100mA
V
I_C = 100mA, V_CE = 5.0V
pF
pF
MHz
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V_CE = 5.0V, I_C = 10mA,
f = 100MHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30047 Rev. 4 - 2
1 of 2
MMBTA13 / MMBTA14
www.diodes.com