MMBTA05_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODEL: MMBTA05 MMBTA06
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
A
(MMBTA55 / MMBTA56)
• Ideal for Low Power Amplification and Switching
• Lead Free/RoHS Compliant (Note 3)
BC
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
TOP VIEW
E
D
G
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
K
M
J
L
3
• Terminal Connections: See Diagram
C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMBTA05 Marking (See Page 3): K1G, K1H
• MMBTA06 Marking (See Page 3): K1G
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
B
E
1
2
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013 0.10
K
0.903 1.10
L
0.45
0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
MMBTA05 MMBTA06
60
80
60
80
4.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
MMBTA05
MMBTA06
MMBTA05
MMBTA06
MMBTA05
MMBTA06
MMBTA05
MMBTA06
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CES
h_FE
V_CE(SAT)
V_BE(SAT)
f_T
Min
Max
Unit
Test Condition
60
80
⎯
V
I_C = 100μA, I_E = 0
60
80
⎯
V
I_C = 1.0mA, I_BB = 0
4.0
⎯
V
I_E = 100μA, I_C = 0
⎯
100
nA
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
⎯
100
nA
V_CE = 60V, I_BO = 0V
V_CE = 80V, I_BO = 0V
100
⎯
⎯
0.25
⎯
1.2
⎯
I_C = 10mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
V
I_C = 100mA, I_BB = 10mA
V
I_C = 100mA, V_CE = 1.0V
100
⎯
MHz
V_CE = 2.0V, I_C = 10mA,
f = 100MHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30037 Rev. 10 - 2
1 of 3
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MMBTA05 / MMBTA06
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