MMBTA05_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBTA55 / MMBTA56)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
3
C
Top View
B
E
1
2
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
MMBTA05 MMBTA06
60
80
60
80
4.0
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol
Min
MMBTA05
MMBTA06
V_(BR)CBO
60
80
MMBTA05
MMBTA06
V_(BR)CEO
60
80
V_(BR)EBO
4.0
MMBTA05
MMBTA06
I_CBO
⎯
MMBTA05
MMBTA06
I_CES
⎯
h_FE
V_CE(SAT)
V_BE(SAT)
100
⎯
⎯
f_T
100
Max
⎯
⎯
⎯
100
100
⎯
0.25
1.2
⎯
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 100μA, I_C = 0
nA ^{VCB = 60V, IE = 0}
V_CB = 80V, I_E = 0
nA ^{VCE = 60V, IBO = 0V}
V_CE = 80V, I_BO = 0V
⎯
I_C = 10mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
V I_C = 100mA, I_B = 10mA
V I_C = 100mA, V_CE = 1.0V
MHz V_CE = 2.0V, I_C = 10mA, f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
MMBTA05 / MMBTA06
Document number: DS30037 Rev. 12 - 2
1 of 4
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April 2009
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