MMBT6427_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
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Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
A
C
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 4)
Mechanical Data
B TOP VIEW E
E
D
G
BC
• Case: SOT-23
H
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
J
L
C
• Terminal Connections: See Diagram
• Marking (See Page 3): K1D
• Ordering & Date Code Information: See Page 3
B
E
• Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
40
40
12
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 2) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 2)@ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol Min
Max
Unit
Test Condition
V_(BR)CBO
40
⎯
V I_C = 100μA, I_E = 0
V_(BR)CEO
40
⎯
V I_C = 10mA, I_B = 0
V_(BR)EBO
12
⎯
V I_E = 10μA, I_C = 0
I_CBO
⎯
50
nA V_CB = 30V, I_E = 0
I_CEO
⎯
1.0
μA V_CE = 25V, I_B = 0
I_EBO
⎯
50
nA V_EB = 10V, I_C = 0
h_FE
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
10,000
20,000
14,000
⎯
⎯
⎯
100,000
200,000
140,000
1.2
1.5
2.0
1.75
I_C = 10mA, V_CE = 5.0V
⎯ I_C = 100mA, V_CE = 5.0V
I_C = 500mA, V_CE = 5.0V
V ^{IC = 50mA, IB = 0.5mA}
I_C = 500mA, I_B = 0.5mA
V I_C = 500mA, I_B = 0.5mA
V I_C = 50mA, V_CE =5.0V
C_obo
C_ibo
8.0 Typical
15 Typical
pF V_CB = 10V, f = 1.0MHz, I_E = 0
pF V_EB = 0.5V, f = 1.0MHz, I_C = 0
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30048 Rev. 9 - 2
1 of 3
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MMBT6427
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