MMBT6427 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (DARLINGTON TRANSISTOR)

MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Ideal for Medium Power Amplification and
A
Switching
C
· High Current Gain
BC
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
B TOP VIEW E
E
D
G
H
· Moisture sensitivity: Level 1 per J-STD-020A
K
M
· Terminals: Solderable per MIL-STD-202,
Method 208
J
L
· Terminal Connections: See Diagram
C
· Marking (See Page 2): K1D
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
V_CEO
V_EBO
IC
Pd
RqJA
Tj, TSTG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
MMBT6427
40
40
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Symbol Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V(BR)CBO
40
¾
V(BR)CEO
40
¾
V
IC = 100mA, IE = 0
V
IC = 100mA, IB = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V(BR)EBO
12
¾
V
IE = 10mA, IC = 0
ICBO
¾
50
nA
VCB = 30V, IE = 0
ICEO
¾
1.0
mA
VCE = 25V, IB = 0
I_EBO
¾
50
nA
VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
10,000 100,000
IC = 10mA, VCE = 5.0V
hFE
20,000 200,000
¾
IC = 100mA, VCE = 5.0V
14,000 140,000
IC = 500mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
1.2
1.5
V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
2.0
V
IC = 500mA, IB = 0.5mA
Base- Emitter On Voltage
VBE(ON)
¾
1.75
V
IC = 50mA, VCE =5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0 Typical
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
C_ibo
15 Typical
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30048 Rev. 3 - 2
1 of 2
MMBT6427
www.diodes.com