MMBT5551 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(MMBT5401)
· Ideal for Medium Power Amplification and
Switching
A
C
BC
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
B TOP VIEW E
E
D
G
H
Classification 94V-0
K
M
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
J
L
Method 208
C
· Terminal Connections: See Diagram
· Marking (See Page 2): K4N
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
I_C
P_d
R_qJA
T_j, T_STG
MMBT5551
180
160
6.0
200
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V_(BR)CBO
180
¾
V_(BR)CEO
160
¾
V_(BR)EBO
6.0
¾
ICBO
¾
50
IEBO
¾
50
V
I_C = 100mA, I_E = 0
V
I_C = 1.0mA, I_B = 0
V
IE = 10mA, IC = 0
nA
V_CB = 120V, I_E = 0
mA
V_CB = 120V, I_E = 0, T_A = 100°C
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
80
h_FE
80
30
VCE(SAT)
¾
V_BE(SAT)
¾
¾
250
¾
0.15
0.20
1.0
IC = 1.0mA, VCE = 5.0V
¾
I_C = 10mA, V_CE = 5.0V
IC = 50mA, VCE = 5.0V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
V
IC = 10mA, IB = 1.0mA
I_C = 50mA, I_B = 5.0mA
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Cobo
¾
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
h_fe
50
250
¾
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
V_CE = 5.0V, I_C = 200mA,
RS = 1.0kW, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30061 Rev. 4 - 2
1 of 2
MMBT5551
www.diodes.com