MMBT5401 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
A
(MMBT5551)
C
· Ideal for Medium Power Amplification and
BC
Switching
Mechanical Data
B TOP VIEW E
E
D
G
· Case: SOT-23, Molded Plastic
H
· Case material - UL Flammability Rating
Classification 94V-0
K
M
· Moisture sensitivity: Level 1 per J-STD-020A
J
L
· Terminals: Solderable per MIL-STD-202,
C
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): K4M
· Ordering & Date Code Information: See Page 2 ^B
E
· Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
V_EBO
IC
Pd
R_qJA
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
MMBT5401
-160
-150
-5.0
-200
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Symbol Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V(BR)CBO -160
¾
V(BR)CEO -150
¾
V
IC = -100mA, IE = 0
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V_(BR)EBO -5.0
¾
ICBO
¾
-50
IEBO
¾
-50
V
IE = -10mA, IC = 0
nA
V_CB = -120V, I_E = 0
mA
V_CB = -120V, I_E = 0, T_A = 100°C
nA
VEB = -3.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
50
¾
IC = -1.0mA, VCE = -5.0V
hFE
60
240
¾
IC = -10mA, VCE = -5.0V
50
¾
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
V_CE(SAT)
¾
-0.2
-0.5
V
I_C = -10mA, I_B = -1.0mA
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Cobo
¾
6.0
pF
V_CB = -10V, f = 1.0MHz, I_E = 0
hfe
40
200
¾
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f_T
100
300
MHz
VCE = -10V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
V_CE = -5.0V, I_C = -200mA,
RS = 10W, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30057 Rev. 3 - 2
1 of 2
MMBT5401
www.diodes.com