MMBT4126_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMBT4124)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking (See Page 3): K2B
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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A
C
BC
B TOP VIEW E
E
D
G
H
K
M
J
L
C
B
E
SOT-23
Dim
Min
Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
R_θJA
T_J, T_STG
Value
-25
-25
-4.0
-200
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
-25
-25
-4.0
⎯
⎯
h_FE
V_CE(SAT)
V_BE(SAT)
120
60
⎯
⎯
C_obo
⎯
C_ibo
⎯
h_fe
120
f_T
250
NF
⎯
Max
⎯
⎯
⎯
-50
-50
360
⎯
-0.40
-0.95
4.5
10
480
⎯
4.0
Unit
Test Condition
V I_C = -10μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -10μA, I_C = 0
nA V_CB = -20V, I_E = 0V
nA V_EB = -3.0V, I_C = 0V
⎯
I_C = -2.0mA, V_CE = -1.0V
I_C = -50mA, V_CE = -1.0V
V I_C = -50mA, I_B = -5.0mA
V I_C = -50mA, I_B = -5.0mA
pF
pF
⎯
MHz
dB
V_CB = -5.0V, f = 1.0MHz, I_E = 0
V_EB = -0.5V, f = 1.0MHz, I_C = 0
V_CE = 1.0V, I_C = -2.0mA,
f = 1.0kHz
V_CE = -20V, I_C = -10mA,
f = 100MHz
V_CE = -5.0V, I_C = -100μA,
R_S = 1.0kΩ, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30106 Rev. 8 - 2
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MMBT4126
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