MMBF170 Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K6Z
· Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
M
J
L
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Derating above T_A = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed
Continuous
Pulsed
Symbol
V_DSS
VDGR
V_GSS
I_D
Pd
R_qJA
T_j, T_STG
MMBF170
60
60
±20
±40
500
800
225
1.80
556
-55 to +150
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
Units
V
V
V
mA
mW
mW/°C
K/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ
BV_DSS
60
70
I_DSS
¾
¾
I_GSS
¾
¾
V_GS(th)
0.8
2.1
R_{DS (ON)} ¾
¾
g_FS
80
¾
C_iss
¾
22
C_oss
¾
11
C_rss
¾
2.0
t_D(ON)
¾
¾
t_D(OFF)
¾
¾
Note:1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30104 Rev. C-2
1 of 2
Max
¾
1.0
±10
3.0
5.0
¾
40
30
5.0
10
10
Unit
Test Condition
V VGS = 0V, ID = 100mA
µA VDS = 60V, VGS = 0V
nA VGS = ±15V, VDS = 0V
V VDS = VGS, ID =-250mA
W VGS = 10V, ID = 200mA
mS VDS =10V, ID = 0.2A
pF
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
pF
ns V_DD = 25V, I_D = 0.5A,
ns ^{VGS = 10V, RGEN = 50W}
MMBF170