MMBD4448HT_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT FAST SWITCHING DIODE

SPICE MODELS: MMBD4448HT MMBD4448HTA MMBD4448HTC MMBD4448HTS
MMBD4448HT /HTA /HTC
Lead-free
/HTS
Features
· Ultra-Small Surface Mount Package
· Fast Switching Speed
· For General Purpose Switching Applications
· High Conductance
· Lead Free/RoHS Compliant (Note 3)
Mechanical Data
· Case: SOT-523
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Polarity: See Diagrams Below
· Marking: See Diagrams Below & Page 3
· Weight: 0.002 grams (approx.)
· Ordering Information, see Sheet 2
SURFACE MOUNT FAST SWITCHING DIODE
A
TOP VIEW B C
G
H
K
N
J
D
L
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
M
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
MMBD4448HT Marking: A3 MMBD4448HTA Marking: A6
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
MMBD4448HTC Marking: A7 MMBD4448HTS Marking: AB
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VRM
V_RRM
V_RWM
VR
V_R(RMS)
I_FM
I_O
I_FSM
P_d
R_qJA
T_j , T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Value
100
80
57
500
250
4.0
2.0
150
833
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V_(BR)R
80
¾
V
I_R = 2.5mA
Forward Voltage
0.62
0.72
IF = 5.0mA
V_F
¾
¾
0.855
1.0
V
I_F = 10mA
I_F = 100mA
¾
1.25
I_F = 150mA
Leakage Current (Note 2)
Total Capacitance
100
nA
VR = 70V
I_R
¾
50
mA
V_R = 75V, T_j = 150°C
30
mA
V_R = 25V, T_j = 150°C
25
nA
V_R = 20V
C_T
¾
3.5
pF
VR = 6V, f = 1.0MHz
Reverse Recovery Time
t_rr
¾
4.0
ns
VR = 6V, IF = 5mA
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead
DS30263 Rev. 9 - 2
1 of 3
MMBD4448HT /HTA /HTC /HTS
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ã Diodes Incorporated