MMBD4448DW_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SWITCHING DIODE

MMBD4448DW
Lead-free
SURFACE MOUNT SWITCHING DIODE
Features
· Fast Switching Speed
A
· Surface Mount Package Ideally Suited for Automatic Insertion
· For General Purpose Switching Applications
· High Conductance
BC
· Ultra Miniature Package
· Lead Free/RoHS Compliant (Note 3)
G
Mechanical Data
H
· Case: SOT-363
K
M
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
DF
L
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
C₁
NC
A₂
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Polarity: See Diagram
A₁
NC
C₂
· Marking: KA3 (See Page 3)
TOP VIEW
· Weight: 0.006 grams (approx.)
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1ms
@ t < 1s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_d
R_qJA
T_j , T_STG
Value
100
75
53
500
250
4
2
200
625
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
V_F
I_R
C_T
t_rr
Min
75
0.62
¾
¾
¾
¾
¾
¾
Max
¾
0.720
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
I_R = 10mA
IF = 5.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
VR = 75V
V_R = 75V, T_j = 150°C
V_R = 25V, T_j = 150°C
V_R = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating.
3. No purposefully added lead.
DS31035 Rev. 6 - 2
1 of 3
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MMBD4448DW
ã Diodes Incorporated