MMBD4448DW_09 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SWITCHING DIODE

MMBD4448DW
Features
SURFACE MOUNT SWITCHING DIODE
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Mechanical Data
• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automated Insertion
• For General Purpose Switching Applications
• High Conductance
• Ultra Miniature Package
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 4 and 5)
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
SOT-363
C₁
NC
A₂
TOP VIEW
A₁
NC
C₂
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
75
V
V_R
RMS Reverse Voltage
V_R(RMS)
53
V
Forward Continuous Current
(Note 1)
I_FM
500
mA
Average Rectified Output Current
(Note 1)
I_O
250
mA
Non-Repetitive Peak Forward Surge Current
@ t < 1μs
@ t < 1s
I_FSM
4
2
A
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Symbol
P_D
R_θJA
T_{J ,} T_STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
(Note 2) V_(BR)R
V_F
Min
75
0.62
⎯
⎯
⎯
(Note 2) I_R
⎯
C_T
⎯
t_rr
⎯
Max
⎯
0.720
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I_R = 10μA
I_F = 5.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 75V
V_R = 75V, T_J = 150°C
V_R = 25V, T_J = 150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBD4448DW
Document number: DS31035 Rev. 11 - 2
1 of 3
www.diodes.com
February 2009
© Diodes Incorporated