MJD350 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Power Transistors D-PAK for Surface Mount Applications

Features
• Epitaxial Planar Die Construction
• High Collector-EmitterVoltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
MJD350
HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: DPAK
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.34 grams (approximate)
COLLECTOR
3
BASE
Top View
EMITTER
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
4
2
1
Pin Out Configuration
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
-300
-300
-3
-0.5
-0.75
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @T_C = 25°C
Thermal Resistance, Junction to Case
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJC
P_D
R_θJA
T_J, T_STG
Value
15
8.33
1.56
81
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 4)
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Symbol Min Typ Max Unit
Test Condition
V_(SUS)CEO -300
⎯
⎯
V I_C = -1mA, I_B = 0
I_CBO
⎯
⎯
-100
μA V_CB = -300V, I_E = 0
I_EBO
⎯
⎯
-100
μA V_EB = - 3V, I_C = 0
h_FE
30
⎯
240
⎯ V_CE = -10V, I_C = -50mA
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with the minimum pad size recommended.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
MJD350
Document number: DS31608 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated