MJD32C Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

Features
• Epitaxial Planar Die Construction
• High Collector-EmitterVoltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
MJD32C
PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: TO252-3L
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.34 grams (approximate)
Top View
COLLECTOR
BASE
EMITTER
Device Schematic
3
4
2
1
Pin Out Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
-100
-100
-5
-3
-5
-1
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation @T_C = 25°C
Thermal Resistance, Junction to Case
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJC
P_D
R_θJA
T_J, T_STG
Value
15
8.33
1.5
80
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Unit
W
°C/W
W
°C/W
°C
MJD32C
Document number: DS31624 Rev. 3 - 2
1 of 6
www.diodes.com
May 2010
© Diodes Incorporated