MIMD10A Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT

SPICE MODELS: MIMD10A
MIMD10A
DUAL PRE-BIASED TRANSISTORS
FOR POWER MANAGEMENT
Features
· Epitaxial Planar Die Construction
· Built-In Biasing Resistors
· One 500mA PNP and One 100mA NPN
· Available in Lead Free/RoHS Compliant Version (Note 2)
A
C₂
B₁
E₁
BC
Mechanical Data
· Case: SOT-363
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
· Also available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
· Marking Code: C73 (See Page 2)
· Ordering & Date Code: See Page 2
· Terminal Connections: See Diagram
· Weight: 0.015 grams (approx.)
P/N
R1
R2
MIMD10A Tr1
0.1K
10K
Tr2
10K
-
E₂
B₂
C₁
G
H
K
J
DF
L
T_r2
R_{1 R2}
R₁
T_r1
SCHEMATIC DIAGRAM
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
M
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings PNP Section Tr1 ^{@ T}A ^{= 25°C unless otherwise specified}
Supply Voltage
Input Voltage
Output Current
Characteristic
Symbol
V_CC
V_IN
I_O
Value
-50
-5 to +5
-500
Maximum Ratings NPN Section Tr2 ^{@ TA = 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
50
50
5
100
Maximum Ratings - Total ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 1)
Operating and Storage Temperature Range
Symbol
P_d
T_j, T_STG
Value
200
-55 to +150
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30381 Rev. 5 - 2
1 of 3
www.diodes.com
Unit
V
V
mA
Unit
V
V
V
mA
Unit
mW
°C
MIMD10A
ã Diodes Incorporated