MBRM3100 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITE3

MBRM3100
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
UNDER DEVELOPMENT
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Reverse Breakdown Voltage
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: POWERMITEâ3, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Moisture sensitivity: Level 1 per J-STD-020A
· Polarity: See Diagram
· Marking: See Sheet 3
· Weight: 0.072 grams (approx.)
A
E
P
G
3
JH
B
1
2
D
C
C
M
K
L
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
POWERMITEâ3
Dim Min Max
A
4.03 4.09
B
6.40 6.61
C
.889 NOM
D
1.83 NOM
E
1.10 1.14
G
.178 NOM
H
5.01 5.17
J
4.37 4.43
K
.178 NOM
L
.71
.77
M
.36
.46
P
1.73 1.83
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ TC = 90°C
Typical Thermal Resistance Junction to Soldering Point
Typical Thermal Resistance Junction to Case
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
V_RWM
VR
VR(RMS)
IO
I_FSM
RqJS
R_qJC
Tj
TSTG
Value
100
70
3
50
3.5
1.6
-55 to +125
-55 to +150
Unit
V
V
A
A
°C/W
°C/W
°C
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Reverse Current (Note 1)
Total Capacitance
Symbol
V(BR)R
VF
I_R
C_T
Min Typ Max Unit
Test Condition
100
¾
¾
V IR = 0.2mA
¾
0.72 0.76
I_F = 3A, T_j = 25°C
¾
0.60
¾
¾
0.79
¾
V
IF = 3A, Tj = 100°C
I_F = 6A, T_j = 25°C
¾
0.68
¾
IF = 6A, Tj = 100°C
¾
2
100 mA Tj = 25°C, VR = 100V
¾
0.5
20 mA Tj = 100°C, VR = 100V
¾
85
¾
pF f = 1.0MHz, VR = 4.0V DC
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30354 Rev. 3 - 1
1 of 3
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MBRM3100