MBR730_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 7.5A SCHOTTKY BARRIER RECTIFIER

MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
· Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
· Case: TO-220AC
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
· Polarity: See Diagram
· Marking: Type Number
· Weight: 2.3 grams (approx.)
B
C
D
K
L
M
A
Pin 1
Pin 2
E
G
J
N
R
Pin 1 +
Pin 2 -
P
+
Case
TO-220AC
Dim Min Max
A 14.48 15.75
B 10.00 10.40
C
2.54 3.43
D
5.90 6.40
E
2.80 3.93
G 12.70 14.27
J
0.69 0.93
K
3.54 3.78
L
4.07 4.82
M
1.15 1.39
N
0.30 0.50
P
2.04 2.79
R
4.83 5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T_C = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
(Note 3)
@ I_F = 7.5A, T_J = 25°C
@ I_F = 7.5A, T_J = 125°C
@ I_F = 15A, T_J = 25°C
@ I_F = 15A, T_J = 125°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_J = 25°C
@ T_J = 125°C
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V_R)
Operating Temperature Range
Storage Temperature Range
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
V_FM
IRM
C_T
R_qJc
dV/dt
T_j
TSTG
MBR
730
30
21
MBR
735
35
24.5
MBR
740
MBR
745
40
45
28
31.5
7.5
150
¾
0.57
0.84
0.72
0.1
15
400
3.5
10,000
-55 to +150
-55 to +175
MBR
750
50
35
MBR
760
60
42
0.75
0.65
¾
¾
0.5
50
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Short duration test pulse used to minimize self-heating effect.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
Unit
V
V
A
A
V
mA
pF
°C/W
V/ms
°C
°C
DS23007 Rev. 9 - 2
1 of 3
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MBR730-MBR760
ã Diodes Incorporated