MBR3030PT_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 30A SCHOTTKY BARRIER RECTIFIER

MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
· Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
· Case: TO-3P
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish ¾ Bright Tin. Plated Leads Solderable
per MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Ordering Information: See Last Page
· Marking: Type Number
· Weight: 5.6 grams (approximate)
A
H
B
S
J
C
R
K
P
Q
L
G
D
N
E
MM
TO-3P
Dim Min
Max
A 1.88 2.08
B 4.68 5.36
C 20.63 22.38
D 18.5 21.5
E
2.1
2.4
G 0.51 0.76
H 15.38 16.25
J
1.90
2.70
K 2.9Æ 3.65Æ
L
3.78
4.50
M
5.2
5.7
N 0.89 1.53
P 1.82 2.46
Q 2.92 3.23
R 11.70 12.84
S
¾
6.10
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Total Device (See Fig. 1)
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
per element (Note 3)
@ I_F = 20A, T_C = 25°C
@ I_F = 20A, T_C = 125°C
@ I_F = 30A, T_C = 25°C
@ I_F = 30A, T_C = 125°C
Peak Reverse Current
@ T_C = 25°C
at Rated DC Blocking Voltage, per element @ T_C = 125°C
Typical Total Capacitance
(Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V_R)
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
VRWM
VR
V_R(RMS)
I_O
I_FSM
V_FM
IRM
C_T
R_qJc
dV/dt
T_j
TSTG
MBR
3030PT
30
21
MBR MBR MBR
3035PT 3040PT 3045PT
35
40
45
24.5
28
31.5
30
200
¾
0.60
0.76
0.72
1.0
60
500
1.4
10,000
-65 to +150
-65 to +175
MBR MBR
3050PT 3060PT
50
60
35
42
0.75
0.65
0.80
0.75
5.0
100
Unit
V
V
A
A
V
mA
pF
°C/W
V/µs
°C
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23017 Rev. 8 - 2
1 of 3
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MBR3030PT - MBR3060PT
ã Diodes Incorporated