MBR1030CT_1 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 10A SCHOTTKY BARRIER RECTIFIER

SPICE MODELS: MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT
MBR1030CT - MBR1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
· Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
· Case: TO-220AB
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Polarity: As Marked on Body
· Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
· Marking: Type Number
· Weight: 2.24 grams (approx.)
C
K
B
D
L
M
A
12 3
E
G
J
N
HH
Pin 1
Pin 2
Pin 3
P
Case
TO-220AB
Dim Min Max
A 14.48 15.75
B 10.00 10.40
C
2.54 3.43
D
5.90 6.40
E
2.80 3.93
G 12.70 14.27
H
2.40 2.70
J
0.69 0.93
K
3.54 3.78
L
4.07 4.82
M
1.15 1.39
N
0.30 0.50
P
2.04 2.79
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T_C = 105°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
@ t £ 2.0ms
Forward Voltage Drop
@ I_F = 5.0A, T_C = 125°C
@ I_F = 5.0A, T_C = 25°C
@ I_F = 10A, T_C = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_C = 25°C
@ T_C = 125°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V_R)
Operating and Storage Temperature Range
V_RRM
VRWM
VR
V_R(RMS)
I_O
I_FSM
I_RRM
V_FM
IRM
C_j
R_qJC
dV/dt
T_j, T_STG
MBR
1030CT
30
21
MBR MBR MBR
1035CT 1040CT 1045CT
35
40
45
24.5
28
31.5
10
125
1.0
0.57
0.70
0.84
0.1
15
150
30
1000
-65 to +150
MBR MBR
1050CT 1060CT
50
60
35
42
0.70
0.80
0.95
Unit
V
V
A
A
A
V
mA
pF
K/W
V/ms
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30027 Rev. 2 - 2
1 of 2
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MBR1030CT-MBR1060CT
ã Diodes Incorporated