LMN400E01_1 Datasheet, PDF (1/8 Pages) Diodes Incorporated – 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

LMN400E01
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
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General Description
LMN400E01 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V_CE(SAT) which does not
depend on input voltage and can support continuous maximum
current of 400 mA. It also contains an ESD protected discrete N-
MOSFET that can be used as control. The component can be used
as a part of a circuit or as a stand alone discrete device.
Features
6
5
4
1
2
3
• Voltage Controlled Small Signal Switch
• N-MOSFET with ESD Gate Protection
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/ROHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.006 grams (approximate)
Fig. 1: SOT-363
C_Q1
6
B_Q1
5
S_Q2
4
C
Q1
PNP
DDTB122LU
B ^R2
220
E
R1 10K
S
DMN601TK _Q2
G
NMOS
D
1
E_Q1
2
G_Q2
3
D_Q2
Fig 2: Schematic and Pin Configuration
Sub-Component P/N
DDTB122LU_DIE
DMN601TK_DIE
(ESD Protected)
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1(NOM)
10K
⎯
R2(NOM)
220
⎯
Figure
2
2
Maximum Ratings, Total Device @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Power Derating Factor above 37.5°C
Output Current
(Note 3)
Symbol
P_D
P_der
I_out
Value
200
1.6
400
Unit
mW
mW/°C
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
(Equivalent to one heated junction of PNP transistor)
(Note 3)
Symbol
T_j, T_STG
R_θJA
Value
-55 to +150
625
Unit
°C
°C/W
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30750 Rev. 7 - 2
1 of 8
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LMN400E01
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