LMN400E01 Datasheet, PDF (1/10 Pages) Diodes Incorporated – 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

LMN400E01
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP
TRANSISTOR AND ESD PROTECTED N-MOSFET
General Description
• LMN400E01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete pass transistor with stable
V_CE(SAT) which does not depend on input voltage and can
support continuous maximum current of 400 mA. It also
contains an ESD protected discrete N-MOSFET that can be
used as control. The component can be used as a part of a
circuit or as a stand alone discrete device.
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with ESD Gate Protection
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/ROHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
• Marking & Type Code Information: See Last Page
• Ordering Information: See Last Page
• Weight: 0.016 grams (approximate)
6
5
4
1
2
3
Fig. 1: SOT-363
C_Q1
6
B_Q1
5
S_Q2
4
C
Q1
PNP
DDTB122LU
B ^R2
220
E
R1 10K
S
DMN601TK _Q2
G
NMOS
D
1
E_Q1
2
G_Q2
3
D_Q2
Fig 2 : Schematic and Pin Configuration
Sub-Component P/N
DDTB122LU_DIE
DMN601TK_DIE (ESD Protected)
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1(NOM)
10K

R2(NOM)
220

Figure
2
2
Maximum Ratings, Total Device ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 37.5°C
Output Current
Symbol
P_d
P_der
I_out
Value
200
1.6
400
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)
Symbol
T_j, T_stg
R_θJA
Value
-55 to +150
625
Unit
°C
°C/W
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30750 Rev. 4 - 2
1 of 10
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LMN400E01
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