LMN400B01 Datasheet, PDF (1/10 Pages) Diodes Incorporated – 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR

Lead-free Green
LMN400B01
400mA LOAD SWITCH FEATURING PNP
TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR
General Description
• LMN400B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete pass transistor with stable
V_CE(SAT) which does not depend on input voltage and can
support continuous maximum current of 400 mA . It also
contains a discrete N-MOSFET with gate pull-down resistor
that can be used as control. The component devices can
be used as a part of a circuit or as a stand alone discrete
device.
6
5
4
1
2
3
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/ROHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Last Page
• Ordering Information: See Last Page
• Weight: 0.016 grams (approx.)
Fig. 1: SOT-26
C_Q1
6
B_Q1
5
S_Q2
4
C
Q1
PNP
DDTB122LU_DIE
B
R2
R3
220
E
37K
R1 10K
G
DSNM6047_DIE
S
Q2
NMOSFET
D
1
2
3
E_Q1
G_Q2
D_Q2
Fig. 2 Schematic and Pin Configuration
Sub-Components
DDTB122LU_DIE
DSNM6047_DIE (with Gate Pull-Down Resistor)
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1 (NOM)
10K

R2 (NOM) R3 (NOM)
220


37K
Figure
2
2
Maximum Ratings, Total Device ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 100°C
Output Current
Symbol
P_d
Pder
I_out
Value
300
2.4
400
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to
one heated junction of PNP transistor)
Symbol
Tj, Tstg
RθJA
Value
-55 to +150
417
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Unit
°C
°C/W
DS30699 Rev. 5 - 2
1 of 10
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LMN400B01
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