LMN200B02_1 Datasheet, PDF (1/10 Pages) Diodes Incorporated – 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET

LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
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General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V_CE(SAT) which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.006 grams (approximate)
6
5
4
1
2
3
Fig. 1: SOT-363
C_Q1
6
B_Q1
5
S_Q2
4
C
DDTB142JU_DIE
Q1
B
R2
PNP
470
E
R1 10K
R3
37K _S
G
Q2
NMOS
DSNM6047_DIE _D
1
E_Q1
2
G_Q2
3
D_Q2
Fig. 2 Schematic and Pin Configuration
Sub-Component P/N
DDTB142JU_DIE
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1 (NOM)
10K
⎯
R2 (NOM)
470
⎯
R3 (NOM) Figure
⎯
2
37K
2
Maximum Ratings, Total Device @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current
Symbol
P_D
P_der
I_out
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
Symbol
T_J,T_STG
R_θJA
Value
-55 to +150
625
Unit
°C
°C/W
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30658 Rev. 7 - 2
1 of 9
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LMN200B02
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