LMN200B01 Datasheet, PDF (1/10 Pages) Diodes Incorporated – 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR

Lead-free Green
LMN200B01
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH PULL DOWN RESISTOR
General Description
• LMN200B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators, etc., particularly at a point
of load. It features a discrete pass transistor with stable
VCE(SAT) which does not depend on the input voltage and
can support continuous maximum current of 200 mA. It
also contains a discrete N-MOSFET that can be used as
control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part
of a circuit or as a stand alone discrete device.
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/ROHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Last Page
• Ordering Information: See Last Page
• Weight: 0.016 grams (approximate)
6
5
4
1
2
3
Fig. 1: SOT-26
C_Q1
6
B_Q1
5
S_Q2
4
C
Q1
DDTB142JU_DIE
PNP
B
R2
470
E
R1 10K
R3
37K _S
G
Q2
NMOS
DSNM6047_DIE _D
1
E_Q1
2
G_Q2
3
D_Q2
Fig. 2 Schematic and Pin Configuration
Sub-Components
DDTB142JU_DIE
DSNM6047_DIE
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1 (NOM)
10K

R2 (NOM)
470

R3 (NOM)

37K
Figure
2
2
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current
Symbol
P_d
P_der
I_out
Value
300
2.4
200
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note3)
(Equivalent to one heated junction of PNP transistor)
Symbol
T_j,T_stg
RθJA
Value
-55 to +150
417
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Unit
mW
mW/°C
mA
Unit
°C
°C/W
DS30651 Rev. 7 - 2
1 of 10
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LMN200B01
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