LLSD101A Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

LLSD101A - 101C
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Fast Reverse Recovery Time
· Low Reverse Capacitance
Mechanical Data
· Case: MiniMELF, Glass
· Terminals: Solderable per MIL-STD-202,
Method 208
· Marking: Cathode Band Only
· Polarity: Cathode Band
· Weight: 0.05 grams (approx.)
C
B
A
MiniMELF
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
V_R(RMS)
IFM
IFSM
Pd
R_qJA
Tj
T_STG
LLSD101A
60
42
LLSD101B
50
35
15
50
2.0
400
375
-55 to +125
-55 to +150
LLSD101C
40
28
Unit
V
V
mA
mA
A
mW
°C/W
°C
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Forward Voltage Drop (Note 2)
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
Min
Max
LLSD101A
LLSD101B
LLSD101C
LLSD101A
V_F
LLSD101B
LLSD101C
0.41
0.40
0.39
¾
1.00
0.95
0.90
LLSD101A
LLSD101B
I_R
LLSD101C
¾
200
LLSD101A
2.0
LLSD101B
C_T
¾
2.1
LLSD101C
2.2
trr
¾
1.0
Unit
V
nA
pF
ns
Test Condition
I_F = 1.0mA
IF = 1.0mA
I_F = 1.0mA
I_F = 15mA
IF = 15mA
I_F = 15mA
V_R = 50V
VR = 40V
V_R = 30V
V_R = 0V, f = 1.0MHz
I_F = I_R = 5.0mA,
Irr = 0.1 x IR, RL = 100W
Note:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30067 Rev. 2 - 2
1 of 2
LLSD101A - 101C