IMX8_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (IMT4)
• Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device, Note 4 and 5
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: KX8, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.016 grams (approximate)
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
B₂
B₁
E₁
BC
C₂
E₂
C₁
H
K
J
DF
L
B₂
B₁
E₁
C₂
E₂
C₁
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
F ⎯ ⎯ 0.55
H 2.90 3.10 3.00
M
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8° ⎯
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
120
120
5.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
Typ
Max
Unit
Test Condition
V_(BR)CBO 120
⎯
⎯
V I_C = 50μA
V_(BR)CEO 120
⎯
⎯
V I_C = 1.0mA
V_(BR)EBO 5.0
⎯
⎯
V I_E = 50μA
I_CBO
⎯
⎯
0.5
μA V_CB = 100V
I_EBO
⎯
⎯
0.5
μA V_EB = 4.0V
h_FE
180
⎯
820
⎯ I_C = 2.0mA, V_CE = 6.0V
V_CE(SAT)
⎯
⎯
0.5
V I_C = 10mA, I_B = 1.0mA
f_T
⎯
140
⎯
MHz ^{VCE = 12V, IC = 2.0mA,}
f = 100MHz
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 8 - 2
1 of 3
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