IMX8_1 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODEL: IMX8
Lead-free Green
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Type Available (IMT4)
· Small Surface Mount Package
· Lead Free/RoHS Compliant (Note 3)
· "Green" Device, Note 4 and 5
A
B₂
B₁
E₁
BC
Mechanical Data
C₂
E₂
C₁
· Case: SOT-26
· Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability
Classification 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
· Marking (See Page 2): KX8
· Ordering & Date Code Information: See Page 2
· Weight: 0.016 grams (approximate)
H
K
J
DF
L
B₂
B₁
E₁
C₂
E₂
C₁
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ¾ ¾ 0.95
F ¾ ¾ 0.55
H 2.90 3.10 3.00
M
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
a 0° 8° ¾
All Dimensions in mm
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
IC
P_d
RqJA
T_j, T_STG
Value
120
120
5.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
Typ
Max
Unit
Test Condition
V(BR)CBO
120
¾
¾
V
IC = 50mA
V_(BR)CEO
120
¾
¾
V
IC = 1.0mA
V(BR)EBO
5.0
¾
¾
V
IE = 50mA
I_CBO
¾
¾
0.5
mA
VCB = 100V
IEBO
¾
¾
0.5
mA
V_EB = 4.0V
h_FE
180
¾
820
¾
IC = 2.0mA, VCE = 6.0V
VCE(SAT)
¾
¾
0.5
V
I_C = 10mA, I_B = 1.0mA
fT
¾
140
¾
MHz
VCE = 12V, IC = 2.0mA,
f = 100MHz
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 7 - 2
1 of 4
www.diodes.com
IMX8
ã Diodes Incorporated