IMX8 Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(IMT4)
· Small Surface Mount Package
Mechanical Data
· Case: SOT-26, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: KX8
· Weight: 0.016 grams (approx.)
A
B₂
B₁
E₁
KX8
BC
C₂
E₂
C₁
H
K
J
DF
L
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ¾ ¾ 0.95
F ¾ ¾ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
M
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
VCEO
VEBO
IC
Pd
RqJA
Tj, TSTG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
120
120
5.0
¾
¾
hFE
180
VCE(SAT)
¾
fT
¾
Typ
¾
¾
¾
¾
¾
¾
¾
140
Max
¾
¾
¾
0.5
0.5
820
0.5
¾
IMX8
120
120
5.0
50
225
555
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Unit
Test Condition
V
IC = 50mA
V
IC = 1.0mA
V
IE = 50mA
mA
VCB = 100V
mA
VEB = 4.0V
¾
IC = 2.0mA, VCE = 6.0V
V
IC = 10mA, IB = 1.0mA
MHz
VCE = 12V, IE = -2.0mA,
f = 100MHz
Ordering Information ^{(Note 3)}
Device
IMX8-7
Packaging
SOT-26
Shipping
3000/Tape & Reel
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30304 Rev. A-2
1 of 2
IMX8