IMT4_1 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODEL: IMT4
Lead-free Green
IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Type Available (IMX8)
· Small Surface Mount Package
· Lead Free/RoHS Compliant (Note 3)
· "Green" Device, Note 4 and 5
Mechanical Data
· Case: SOT-26
· Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
· Marking: KX7, See Page 2
· Ordering & Date Code Information: See Page 2
· Weight: 0.016 grams (approximate)
A
B₂
B₁
E₁
BC
C₂
E₂
C₁
H
K
J
DF
L
B₂
B₁
E₁
C₂
E₂
C₁
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pd
R_qJA
Tj, TSTG
M
Value
-120
-120
-5.0
-50
225
555
-55 to +150
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ¾ ¾ 0.95
F ¾ ¾ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
a 0° 8° ¾
All Dimensions in mm
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol Min Typ Max Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
V(BR)CBO -120
¾
¾
V IC = -50mA
V_(BR)CEO -120
¾
¾
V IC = -1.0mA
V_(BR)EBO -5.0
¾
¾
V IE = -50mA
I_CBO
¾
¾
-0.5
mA VCB = -100V
I_EBO
¾
¾
-0.5
mA VEB = -4.0V
hFE
180
¾
820
¾ IC = -2.0mA, VCE = -6.0V
V_CE(SAT)
¾
¾
-0.5
V IC = -10mA, IB = -1.0mA
f_T
¾
140
¾
MHz
V_CE = -12V, I_C = -2.0mA,
f = 100MHz
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30303 Rev. 7 - 2
1 of 4
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