IMT4 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
(IMX8)
· Small Surface Mount Package
Mechanical Data
· Case: SOT-26, Molded Plastic
· Case material - UL Flammability Rating
K
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
J
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: KX7, See Page 2
· Ordering & Date Code Information: See Page 2
· Weight: 0.016 grams (approx.)
A
B₂
B₁
E₁
BC
C₂
E₂
C₁
H
DF
L
B₂
B₁
E₁
C₂
E₂
C₁
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ¾ ¾ 0.95
F ¾ ¾ 0.55
M
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
a 0° 8° ¾
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_qJA
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
IMT4
-120
-120
-5.0
-50
225
555
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min Typ Max Unit
Test Condition
V(BR)CBO -120
¾
¾
V IC = -50mA
V(BR)CEO -120
¾
¾
V IC = -1.0mA
V(BR)EBO -5.0
¾
¾
V IE = -50mA
ICBO
¾
¾
-0.5
mA VCB = -100V
I_EBO
¾
¾
-0.5
mA VEB = -4.0V
h_FE
180
¾
820
¾ IC = -2.0mA, VCE = -6.0V
VCE(SAT)
¾
¾
-0.5
V IC = -10mA, IB = -1.0mA
fT
¾
140
¾
MHz
V_CE = -12V, I_E = 2.0mA,
f = 100MHz
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
DS30303 Rev. 2 - 2
1 of 3
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IMT4