GBJ8005_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 8.0A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· UL Listed Under Recognized Component Index, File Number
E94661
· Lead Free Finish/RoHS Compliant (Note 4)
K
A
GBJ
Dim Min Max
A 29.70 30.30
B 19.70 20.30
L
C 17.00 18.00
M
D
3.80 4.20
E
7.30 7.70
Mechanical Data
· Case: GBJ
J
· Case Material: Molded Plastic. UL Flammability
H
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
I
B
_
S
N
D
P
C
R
G
9.80 10.20
H
2.00 2.40
I
0.90 1.10
J
2.30 2.70
K
3.0 X 45°
L
4.40 4.80
· Terminals: Plated Leads, Solderable per MIL-STD-202,
Method 208 e3
· Lead Free Plating (Tin Finish).
· Polarity: Molded on Body
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Marking: Type Number
G EE
M
3.40 3.80
N
3.10 3.40
P
2.50 2.90
R
0.60 0.80
S 10.80 11.20
All Dimensions in mm
· Weight: 6.6 grams (approximate)
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
VR
RMS Reverse Voltage
V_R(RMS)
Average Forward Rectified Output Current @ T_C = 110°C IO
Non-Repetitive Peak Forward Surge Current, 8.3ms single
half-sine-wave superimposed on rated load
I_FSM
Forward Voltage per element
@ IF = 4.0A V_FM
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ T_C = 125°C
IR
I²t Rating for Fusing (t < 8.3ms) (Note 1)
I²t
Typical Total Capacitance per Element (Note 2)
C_T
Typical Thermal Resistance Junction to Case (Note 3)
R_qJC
Operating and Storage Temperature Range
T_j, T_STG
GBJ
8005
50
35
GBJ
801
100
70
GBJ GBJ GBJ
802 804 806
200 400 600
140 280 420
8.0
170
1.0
5.0
500
120
55
1.6
-65 to +150
GBJ
808
800
560
GBJ
810
Unit
1000 V
700 V
A
A
V
mA
A²s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS21217 Rev. 7 - 2
1 of 3
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GBJ8005-GBJ810
ã Diodes Incorporated