GBJ10005_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 10A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ10005 - GBJ1010
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
GBJ
· High Case Dielectric Strength of 1500VRMS
Dim Min Max
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· UL Listed Under Recognized Component Index, File Number
E94661
A
K
· Lead Free Finish/RoHS Compliant (Note 4)
A 29.70 30.30
B 19.70 20.30
L
C 17.00 18.00
M
D
3.80 4.20
E
7.30 7.70
Mechanical Data
· Case: GBJ
· Case Material: Molded Plastic - UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Plated Leads, Solderable per MIL-STD-202,
Method 208 e3
· Lead Free Plating (Tin Finish).
B
_
S
N
J
D
P
H
C
R
I
G EE
G
9.80 10.20
H
2.00 2.40
I
0.90 1.10
J
2.30 2.70
K
3.0 X 45°
L
4.40 4.80
M
3.40 3.80
N
3.10 3.40
P
2.50 2.90
· Polarity: Molded on Body
R
0.60 0.80
· Mounting: Through Hole for #6 Screw
S 10.80 11.20
· Mounting Torque: 5.0 in-lbs Maximum
· Marking: Type Number
All Dimensions in mm
· Weight: 6.6 grams (approximate)
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
GBJ
10005
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
50
V_R
RMS Reverse Voltage
V_R(RMS) 35
Average Forward Rectified Output Current
@ T_C = 110°C
IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
I_FSM
Forward Voltage per element
@ I_F = 5.0A V_FM
Peak Reverse Current
at Rated DC Blocking Voltage
@T_C = 25°C
@ T_C = 125°C
IR
I²t Rating for Fusing (t < 8.3ms) (Note 1)
I²t
Typical Total Capacitance per Element (Note 2)
C_T
Typical Thermal Resistance, Junction to Case (Note 3)
R_qJC
Operating and Storage Temperature Range
T_j, T_STG
GBJ
1001
100
70
GBJ GBJ GBJ
1002 1004 1006
200 400 600
140 280 420
10
170
1.05
10
500
120
55
1.4
-65 to +150
GBJ
1008
800
560
GBJ
1010
Unit
1000 V
700 V
A
A
V
mA
A²s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS21218 Rev. 7 - 2
1 of 3
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GBJ10005-GBJ1010
ã Diodes Incorporated