FZTA42 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
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FEATURES
* Suitable for video output stages in TV sets
and switch mode power supplies
* High breakdown voltage
COMPLIMENTARY TYPE – FZTA92
PARTMARKING DETAIL – DEVICE TYPE IN FULL
FZTA42
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_B
I_C
P_tot
T_j:T_stg
VALUE
300
300
5
100
500
2
-55 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V_(BR)CBO 300
UNIT
V
CONDITIONS.
I_C=100µA, I_E=0
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V_(BR)CEO 300
V_(BR)EBO 5
I_CBO
V
I_C=1mA, I_B=0*
V
I_E=100µA, I_C=0
0.1
µA
V_CB=200V, I_E=0
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
0.1
µA
V_EB=5V, I_C=0
0.5 V
I_C=20mA, I_B=2mA
Base-Emitter
Saturation Voltage
V_BE(sat)
Static Forward Current h_FE
25
Transfer Ratio
40
40
Transition
Frequency
f_T
50
0.9 V
I_C=20mA, I_B=2mA
MHz
I_C=1mA, V_CE=10V*
I_C=10mA, V_CE=10V*
I_C=30mA, V_CE=10V*
I_C=10mA, V_CE=20V
f=20MHz
Output Capacitance
C_obo
6
pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.
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V_CB=20V, f=1MHz