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| FZT795A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT795A
ISSUE 3 - OCTOBER 1995
FEATURES
* 140 Volt VCEO
* Gain of 250 at IC=0.2 Amps and very low VCE(sat)
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE Â FZT694B
PARTMARKING DETAIL Â FZT795A
C
E
C
ABSOLUTE MAXIMUM RATINGS.
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-140
V
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
-140
-140
-5
VBE(sat)
V
V
V
-0.1 µA
-0.1 µA
-0.3 V
-0.3 V
-0.25 V
-0.95 V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-100V
VEB=-4V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
IC=-500mA, IB=-50mA*
VBE(on)
-0.75
V
IC=-500mA, VCE=-2V*
Static Forward Current hFE
300
Transfer Ratio
250
100
Transition Frequency
fT
100
800
IC=-10mA, VCE=-2V*
IC=-200mA, VCE=-2V*
IC=-300mA, VCE=-2V*
MHz IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Cibo
225
pF VEB=-0.5V, f=1MHz
Output Capacitance
Cobo
15
pF VCB=-10V, f=1MHz
Switching Times
ton
toff
100
1900
ns IC=-100mA, IB1=-10mA
ns IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 253
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