FZT792A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
FZT792A
C
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE - FZT692B
PARTMARKING DETAIL - FZT792A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
E
C
B
UNIT
Collector-Base Voltage
V_CBO
-75
V
Collector-Emitter Voltage
V_CEO
-70
V
Emitter-Base Voltage
V_EBO
-5
V
Peak Pulse Current
I_CM
-5
A
Continuous Collector Current
I_C
-2
A
Power Dissipation at T_amb=25°C
P_tot
2
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Saturation Voltages
V_(BR)CBO -75
V_(BR)CEO -70
V_(BR)EBO -5
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
-100
V
-90
V
-8.5
V
-0.1 µA
-10 µA
-0.1 µA
-0.30 -0.45 V
-0.30 -0.50 V
-0.30 -0.50 V
-0.80 -0.95 V
I_C=-100µA
I_C=-10mA*
I_E=-100µA
V_CB=-40V
V_CB=-40V,
T_amb=100°C
V_EB=-4V
I_C=-500mA, I_B=-5mA*
I_C=-1A, I_B=-25mA*
I_C=-2A, I_B=-200mA*
I_C=-1A, I_B=-25mA*
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