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| FZT789A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT789A
ISSUE 3 Â OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 93m⦠at 3A
* Gain of 200 at IC=2 Amps and very low saturation voltage
C
APPLICATIONS
* Battery powered circuits, fast charge converters
E
COMPLEMENTARY TYPE - FZT689B
PARTMARKING DETAIL - FZT789A
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Saturation Voltages
V(BR)CBO -25 -40
V
V(BR)CEO -25 -35
V
V(BR)EBO -5 -8.5
V
ICBO
-0.1 µA
10 µA
IEBO
VCE(sat)
-0.1 µA
-0.15 -0.25 V
-0.30 -0.45 V
-0.30 -0.50 V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-15V
VCB=-15V, Tamb=100°C
VEB=-4V
IC=-1A, IB=-10mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(sat)
VBE(on)
-0.8 -1.0 V
-0.8
V
IC=-1A, IB=-10mA*
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
hFE
fT
Cibo
Cobo
ton
toff
300
800
250
200
100
100
225
25
35
400
MHz
pF
pF
ns
ns
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-50mA, VCE=-5V, f=50MHz
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 246
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