FZT788B_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; R_CE(sat) 93mΩ at 3A
* Gain of 300 at I_C=2 Amps and Very low saturation voltage
FZT788B
C
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE – FZT688B
PARTMARKING DETAIL – FZT788B
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Peak Pulse Current
I_CM
Continuous Collector Current
I_C
Power Dissipation at T_amb=25°C
P_tot
Operating and Storage Temperature Range
T_j:T_stg
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
-15
V
-15
V
-5
V
-8
A
-3
A
2
W
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base Breakdown Voltage V_(BR)CBO -15
Collector-Emitter Breakdown Voltage V_(BR)CEO -15
Emitter-Base Breakdown Voltage V_(BR)EBO -5
Collector Cut-Off Current
I_CBO
Emitter Cut-Off Current
I_EBO
Collector-Emitter Saturation
Voltage
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
Base-Emitter Turn-On Voltage
V_BE(on)
Static Forward Current Transfer h_FE
500
Ratio
400
300
150
Transition Frequency
f_T
100
V
V
V
-0.1 µA
-0.1 µA
-0.15 V
-0.25 V
-0.45 V
-0.5
-0.9 V
-0.75
V
1500
MHz
Input Capacitance
C_ibo
225
pF
Output Capacitance
C_obo
25
pF
Switching Times
t_on
35
ns
t_off
400
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
I_C=-100µA
I_C=-10mA*
I_E=-100µA
V_CB=-10V
V_EB=-4V
I_C=-0.5A, I_B=-2.5mA*
I_C=-1A, I_B=-5mA*
I_C=-2A, I_B=-10mA*
I_C=-3A, I_B=-50mA*
I_C=-1A, I_B=-5mA*
I_C=-1A, V_CE=-2V*
I_C=-10mA, V_CE=-2V*
I_C=-1A, V_CE=-2V*
I_C=-2A, V_CE=-2V*
I_C=-6A, V_CE=-2V*
I_C=-50mA, V_CE=-5V
f=50MHz
V_EB=-0.5V, f=1MHz
V_CB=-10V, f=1MHz
I_C=-500mA, I_B1=-50mA
I_B2=-50mA, V_CC=-10V
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