 English |
|
|
|
|
|
|
|
| FZT758TA Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
| |||
|
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT758
ISSUE 2 Â FEBRUARY 1995
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE Â FZT658
PARTMARKING DETAIL Â FZT758
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
-100 nA
-100 nA
-100 nA
-0.30 V
-0.25 V
-0.50 V
-0.9 V
VCB=-320V
VCE=-320V
VEB=-4V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
Base-Emitter Turn On Voltage VBE(on)
Static Forward Current
Transfer Ratio
hFE
50
50
40
Transition Frequency
fT
50
-1.0 V
IC=-100mA, VCE=-5V*
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
MHz IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance
Switching times
Cobo
ton
toff
20
pF
140 Typical ns
2000 Typical ns
VCB=-20V, f=1MHz
IC=-100mA, VCC=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 242
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese