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| FZT757 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4Â JANUARY 1996
FEATURES
* Low saturation voltage
* 300V VCEO
COMPLEMENTARY TYPE - FZT657
PARTMARKING DETAIL - FZT757
FZT757
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-0.5
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -300
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300
V
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA
Collector Cut-Off Current ICBO
-0.1 µA
VCB=-200V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward Current hFE
40
Transfer Ratio
50
Transition Frequency
fT
30
-0.1 µA
-0.5 V
-1.0 V
-1.0 V
MHz
Output Capacitance
Cobo
20
pF
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VEB=-3V
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-5V*
IC=-10mA, VCE =-5V*
IC=-100mA, VCE =-5V*
IC=-10mA, VCE =-20V
f=20MHz
VCB=-20V, f=1MHz
3 - 240
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