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| FZT749 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT749
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).
COMPLEMENTARY TYPE Â FZT649
PARTMARKING DETAIL Â FZT749
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-35
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-8
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off
Currents
Saturation Voltages
Base-Emitter
Turn-On Voltage
V(BR)CBO -35
V(BR)CEO -25
V(BR)EBO -5
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
V
V
V
-0.1 µA
-10
µA
-0.1 µA
-0.12 -0.3 V
-0.40 -0.6 V
-0.9 -1.25 V
-0.8 -1.0 V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VCB=-30V,Tamb=100°C
VEB=4V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-1A, IB=-100mA*
IC=-1A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
70
200
100 200 300
75
150
15
50
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
100 160
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
55
100 pF
Switching Times
ton
40
ns
toff
450
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=-10V f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
3 - 232
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