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| FZT704 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
FZT704
ISSUE 2 - SEPTEMBER 1995
FEATURES
* 2A CONTINUOUS CURRENT
* FAST SWITCHING
* GUARANTEED hFE SPECIFIED UP TO 2A
COMPLEMENTARY TYPE Â FZT 604
PART MARKING DETAIL Â FZT704
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
PTOT
tj:tstg
-120
V
-100
V
-10
V
-4
A
-1.5
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off
Currents
Emitter Cut-Off Current
Saturation Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
VCE(sat)
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
VBE(sat)
VBE(on)
hFE
Transition
fT
Frequency
-120
-100
-10
3000
3000
3000
2000
160
V
V
V
-0.1 µA
-10
µA
-10
µA
-0.1 µA
-1.3 V
-2.5 V
-1.8 V
-1.7 V
30000
MHz
IC=-100µA
IC=-10mA
IE=-100µA
VCB=-100V
VCB=-100V, Tamb=100°C
VCES=-80V
VEB=-8V
IC=-1A, IB=-1mA*
IC=-2A, IB=-2mA*
IC=-1A, IB=-10mA*
IC=-1A, VCE=-5V
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-100mA, VCE=-10V
f=20MHz
Input Capacitance
Cibo
90
pF
Output Capacitance
Cobo
15
pF
Switching Times
Ton
0.6
µs
Toff
0.8
µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
For typical graphs see FZT705 datasheet
VEB=-0.5V, f=1MHz
VEB=-10V, f=1MHz
IC=-0.5A, VCE=-10V
IB1=IB2=0.5mA
3 - 229
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