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| FZT694B_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT694B
ISSUE 3 - OCTOBER 1995
FEATURES
* High VCEO / Very Low Saturation Voltage
* Gain of 400 at IC=200mA
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
PARTMARKING DETAIL - FZT694B
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
120
V
120
V
5
V
2
A
1
A
2
W
-55 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO 120
V(BR)CEO 120
V(BR)EBO
5
ICBO
IEBO
VCE(sat)
VBE(sat)
V
V
V
0.1 µA
0.1 µA
0.25 V
0.5 V
0.9 V
IC=100µA
IC=10mA*
IE=100µA
VCB=100V
VEB=4V
IC=100mA, IB=0.5mA*
IC=400mA, IB=5mA*
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9 V
IC=1A, VCE=2V*
Static Forward
Current Transfer
Ratio
Transition Frequency
hFE
500
400
150
fT
130
MHz
Input Capacitance
Cibo
200
pF
Output Capacitance
Cobo
9
pF
Switching Times
ton
toff
80
ns
2900
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
IC=50mA, VCE=5V
f=50MHz
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
3 - 225
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