 English |
|
|
|
|
|
|
|
| FZT692B Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
| |||
|
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT692B
FEATURES
* High Gain + Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay drivers, DC-DC converters
PARTMARKING DETAIL - FZT692B
C
E
C
B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
70
V
Collector-Emitter Voltage
VCEO
70
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
5
A
Continuous Collector Current
IC
2
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.
BreakdownVoltages
Cut-Off Currents
Saturation Voltages
Base-Emitter
Turn-On Voltage
V(BR)CBO 70
V(BR)CEO 70
V(BR)EBO 5
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
V
V
V
0.1 µA
0.1 µA
0.15 V
0.5 V
0.5 V
0.9 V
0.9 V
IC=100µA
IC=10mA*
IE=100µA
VCB=55V
VEB=4V
IC=0.1A, IB=0.5mA*
IC=1A, IB=10mA*
IC=2A, IB=200mA*
IC=1A, IB=10mA*
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
fT
Cibo
Cobo
ton
toff
500
400
150
150
200
12
46
1440
MHz
pF
pF
ns
ns
IC=100mA,VCE=2V*
IC=500mA, VCE =2V*
IC=1A,VCE=2V*
IC=50mA, VCE=5V, f=50MHz
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=500mA, IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 223
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese