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| FZT690B Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
FZT690B
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; RCE(sat) 125m⦠at 2A
* Gain of 400 at IC=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL Â FZT690B
ABSOLUTE MAXIMUM RATINGS
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
6
A
Continuous Collector Current
IC
3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.
.
Collector-Base Breakdown
Voltage
V(BR)CBO 45
V IC=100µA
Collector-EmitterBreakdown
Emitter-Base Breakdown
Voltage
V(BR)CEO 45
V(BR)EBO 5
V IC=10mA*
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
0.1 µA VCB=35V
0.1 µA VEB=4V
0.1 V
0.5 V
IC=0.1A, IB=0.5mA*
IC=1A, IB=5mA*
0.9 V IC=1A, IB=10mA*
Base-Emitter Turn-On Voltage VBE(on)
0.9 V IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
150
50
IC=100mA,VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=3A, VCE=2V*
Transition Frequency
fT
150
MHz IC=50mA,VCE=5V,f=50MHz
Input Capacitance
Cibo
200
pF VEB=0.5V, f=1MHz
Output Capacitance
Cobo
16
pF VCB=10V, f=1MHz
Switching Times
ton
33
ns IC=500mA, IB!=50mA
toff
1300
ns IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 221
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